Samsung has just started production of its third generation of 3D memory chips NAND-V. The program includes the creation of dies 32GB TLC.
The Samsung SSD 850 series to use 3D NAND memory-V second generation. This allows the cells to stack 32 layers to obtain dies up to 16 GB. With its third generation of 3D memory, Samsung is going a step further by stacking 48 grid cells.
Proposed by TLC, that is to say with three data bits stored in each cell, this memory can be doubled in density. Therefore obtained dies 32GB that are otherwise less energy. The Korean company thus announces a reduced consumption by 30% compared to the previous generation.
Samsung is therefore puts squarely against its competitors as Toshiba and SanDisk have announced such chips in the last few days. But it was not until early 2016 to see happen these chips, Samsung goes faster. The company has thus now integrate its V-3D NAND third generation to series 850. Hopefully this will have no negative impact on the performance of the SSD. These successive announcements also offer hope to see coming a little boost on the pricing of SSD. It is thus conceivable that the GB cost price falls below 30 cents by the end of the first semester 2016.
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